IRFZ34S

N-Channel Power MOSFET, 60V Drain-Source Voltage, 30A Continuous Drain Current, and 50mΩ Drain-to-Source Resistance. This silicon Metal-Oxide Semiconductor FET features a D2PAK surface-mount package with a maximum power dissipation of 88W and an operating temperature range of -55°C to 175°C. Key switching characteristics include a 13ns turn-on delay, 29ns turn-off delay, and a 52ns fall time, with an input capacitance of 1.2nF.