
N-Channel Power MOSFET, 60V Drain-Source Voltage, 30A Continuous Drain Current, and 50mΩ Drain-to-Source Resistance. This silicon Metal-Oxide Semiconductor FET features a D2PAK surface-mount package with a maximum power dissipation of 88W and an operating temperature range of -55°C to 175°C. Key switching characteristics include a 13ns turn-on delay, 29ns turn-off delay, and a 52ns fall time, with an input capacitance of 1.2nF.
Vishay IRFZ34S technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 30A |
| Current Rating | 30A |
| Drain to Source Resistance | 50mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 52ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.69mm |
| Input Capacitance | 1.2nF |
| Lead Free | Contains Lead |
| Length | 10.54mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 88W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 50mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 29ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 60V |
| Weight | 0.050717oz |
| Width | 8.81mm |
| RoHS | Not Compliant |
Download the complete datasheet for Vishay IRFZ34S to view detailed technical specifications.
No datasheet is available for this part.
