Vishay
IRFZ34SPBF
Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3
PackageTO-263-3
MountingSurface Mount
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Technical Specifications
Vishay IRFZ34SPBF technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
30A
Drain to Source Voltage (Vdss)
60V
Fall Time
52ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.2nF
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
88W
Mount
Surface Mount
Packaging
Rail/Tube
Radiation Hardening
No
Rds On Max
50mR
RoHS Compliant
Yes
Turn-Off Delay Time
29ns
Turn-On Delay Time
13ns
Compliance
RoHS
Compliant
Datasheet
Vishay IRFZ34SPBF Datasheet
Download the complete datasheet for Vishay IRFZ34SPBF to view detailed technical specifications.
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