N-Channel Power MOSFET, designed for through-hole mounting in a TO-220AB package. Features a maximum continuous drain current of 35A and a drain-to-source voltage of 60V. Offers a low on-resistance of 28mR at a nominal gate-source voltage of 4V. This component boasts fast switching speeds with turn-on delay time of 15ns and fall time of 12ns. Maximum power dissipation is rated at 150W, with operating temperatures ranging from -55°C to 150°C.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power126W
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Technical Specifications
Vishay IRFZ40PBF technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
35A
Drain to Source Resistance
28mR
Drain to Source Voltage (Vdss)
60V
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Height
9.01mm
Input Capacitance
1.9nF
Lead Free
Lead Free
Length
10.41mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Through Hole
Nominal Vgs
4V
Number of Channels
1
Number of Elements
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
126W
Radiation Hardening
No
Rds On Max
28mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
4V
Turn-Off Delay Time
35ns
Turn-On Delay Time
15ns
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFZ40PBF Datasheet
Download the complete datasheet for Vishay IRFZ40PBF to view detailed technical specifications.
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