N-Channel Power MOSFET, surface mount, featuring 60V drain-source voltage and 50A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 28mΩ drain-source resistance. Designed for high-power applications with a maximum power dissipation of 150W and an operating temperature range of -55°C to 175°C. Packaged in a TO-263AB (D2PAK-3) surface-mount package, it is RoHS compliant and supplied on tape and reel.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFZ44STRRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 50A |
| Drain to Source Resistance | 28mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 92ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.9nF |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 28mR |
| RoHS Compliant | Yes |
| Series | WFET® |
| Turn-Off Delay Time | 45ns |
| Turn-On Delay Time | 14ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRFZ44STRRPBF Datasheet
Download the complete datasheet for Vishay IRFZ44STRRPBF to view detailed technical specifications.
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