N-Channel Power MOSFET, surface mount, featuring 60V drain-source voltage and 50A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 28mΩ drain-source resistance. Designed for high-power applications with a maximum power dissipation of 150W and an operating temperature range of -55°C to 175°C. Packaged in a TO-263AB (D2PAK-3) surface-mount package, it is RoHS compliant and supplied on tape and reel.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFZ44STRRPBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
50A
Drain to Source Resistance
28mR
Drain to Source Voltage (Vdss)
60V
Fall Time
92ns
Gate to Source Voltage (Vgs)
20V
Height
4.83mm
Input Capacitance
1.9nF
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Surface Mount
Number of Channels
1
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
28mR
RoHS Compliant
Yes
Series
WFET®
Turn-Off Delay Time
45ns
Turn-On Delay Time
14ns
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRFZ44STRRPBF Datasheet
Download the complete datasheet for Vishay IRFZ44STRRPBF to view detailed technical specifications.
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