Vishay
IRFZ48RS
Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3
PolarityN-CHANNEL
Power190W
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Technical Specifications
Vishay IRFZ48RS technical specifications.
General
| Continuous Drain Current (ID) | 50A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 18mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 250ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 190W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 210ns |
| Turn-On Delay Time | 8.1ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IRFZ48RS Datasheet
Download the complete datasheet for Vishay IRFZ48RS to view detailed technical specifications.
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