N-channel power MOSFET, 60V drain-source voltage, featuring 50A continuous drain current and 18mΩ drain-source resistance. This silicon Metal-oxide Semiconductor FET offers a maximum power dissipation of 190W and operates within a temperature range of -55°C to 175°C. Designed for surface mounting in a D2PAK package, it includes fast switching characteristics with turn-on delay time of 8.1ns and fall time of 250ns.
PackageD2PAK
Current Rating50A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFZ48STRL technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
50A
Current Rating
50A
Drain to Source Resistance
18mR
Drain to Source Voltage (Vdss)
60V
Fall Time
250ns
Gate to Source Voltage (Vgs)
20V
Height
4.69mm
Input Capacitance
2.4nF
Lead Free
Contains Lead
Length
10.54mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
190W
Mount
Surface Mount
Number of Channels
1
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
18mR
RoHS Compliant
No
Turn-Off Delay Time
210ns
Turn-On Delay Time
8.1ns
DC Rated Voltage
60V
Weight
0.050717oz
Width
8.81mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRFZ48STRL Datasheet
Download the complete datasheet for Vishay IRFZ48STRL to view detailed technical specifications.
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