N-channel power MOSFET, 60V drain-source voltage, featuring 50A continuous drain current and 18mΩ drain-source resistance. This silicon Metal-oxide Semiconductor FET offers a maximum power dissipation of 190W and operates within a temperature range of -55°C to 175°C. Designed for surface mounting in a D2PAK package, it includes fast switching characteristics with turn-on delay time of 8.1ns and fall time of 250ns.
PackageD2PAK
Current Rating50A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRFZ48STRL technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 50A |
| Current Rating | 50A |
| Drain to Source Resistance | 18mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 250ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.69mm |
| Input Capacitance | 2.4nF |
| Lead Free | Contains Lead |
| Length | 10.54mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 190W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 18mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 210ns |
| Turn-On Delay Time | 8.1ns |
| DC Rated Voltage | 60V |
| Weight | 0.050717oz |
| Width | 8.81mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IRFZ48STRL Datasheet
Download the complete datasheet for Vishay IRFZ48STRL to view detailed technical specifications.
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