Vishay
IRL510L
Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
PackageTO-262-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRL510L technical specifications.
General
Package/Case
TO-262-3
Continuous Drain Current (ID)
5.6A
Drain to Source Resistance
540mR
Drain to Source Voltage (Vdss)
100V
Fall Time
18ns
Gate to Source Voltage (Vgs)
10V
Height
9.01mm
Input Capacitance
250pF
Length
10.41mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.7W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
540mR
RoHS Compliant
No
Turn-Off Delay Time
16ns
Turn-On Delay Time
9.3ns
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRL510L Datasheet
Download the complete datasheet for Vishay IRL510L to view detailed technical specifications.
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