
N-Channel Power MOSFET, 100V Drain-Source Voltage, 15A Continuous Drain Current, and 160mΩ Drain-to-Source Resistance. Features include a 4.7ns turn-on delay, 22ns turn-off delay, and 48ns fall time. This silicon Metal-oxide Semiconductor FET operates from -55°C to 175°C with a maximum power dissipation of 88W. Packaged in a D2PAK surface-mount case, it offers a 930pF input capacitance and is supplied on tape and reel.
Vishay IRL530STRR technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 15A |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 48ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 4.83mm |
| Input Capacitance | 930pF |
| Lead Free | Contains Lead |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 88W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 160mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 4.7ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
| RoHS | Not Compliant |
Download the complete datasheet for Vishay IRL530STRR to view detailed technical specifications.
No datasheet is available for this part.
