N-Channel Power MOSFET, 100V Vdss, 28A continuous drain current, and 77mΩ maximum drain-source on-resistance. Features include 8.5ns turn-on delay, 35ns turn-off delay, and 80ns fall time. This silicon Metal-oxide Semiconductor FET operates from -55°C to 175°C with a maximum power dissipation of 3.7W. Packaged in a TO-263AB (D2PAK-3) surface-mount package, it is RoHS compliant.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRL540SPBF technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
28A
Drain to Source Resistance
77mR
Drain to Source Voltage (Vdss)
100V
Drain-source On Resistance-Max
77mR
Fall Time
80ns
Gate to Source Voltage (Vgs)
10V
Height
4.83mm
Input Capacitance
2.2nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.7W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
77mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Threshold Voltage
2V
Turn-Off Delay Time
35ns
Turn-On Delay Time
8.5ns
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRL540SPBF Datasheet
Download the complete datasheet for Vishay IRL540SPBF to view detailed technical specifications.
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