N-Channel Power MOSFET featuring 200V drain-source breakdown voltage and 5.2A continuous drain current. This silicon Metal-Oxide Semiconductor FET offers a low 800mΩ drain-source on-resistance. Designed for through-hole mounting in a TO-220AB package, it operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 50W. Key switching characteristics include a 4.2ns turn-on delay and 17ns fall time.
PackageTO-220-3
Current Rating5.2A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRL620PBF technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 5.2A |
| Current Rating | 5.2A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 800mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 800mR |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 9.01mm |
| Input Capacitance | 360pF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Nominal Vgs | 2V |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 50W |
| Radiation Hardening | No |
| Rds On Max | 800mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 4.2ns |
| DC Rated Voltage | 200V |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRL620PBF Datasheet
Download the complete datasheet for Vishay IRL620PBF to view detailed technical specifications.
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