N-Channel Power MOSFET, D2PAK package, featuring 200V Drain-to-Source Voltage (Vdss) and 5.2A Continuous Drain Current (ID). Offers 800mΩ Drain-to-Source On-Resistance (Rds On Max) and 50W Max Power Dissipation. Includes fast switching characteristics with a 4.2ns Turn-On Delay Time and 17ns Fall Time. Designed for surface mounting with a single element and silicon metal-oxide semiconductor construction.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRL620S technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 5.2A |
| Drain to Source Resistance | 800mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 4.83mm |
| Input Capacitance | 360pF |
| Lead Free | Contains Lead |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 800mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 4.2ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IRL620S Datasheet
Download the complete datasheet for Vishay IRL620S to view detailed technical specifications.
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