N-Channel Power MOSFET, D2PAK package, featuring 200V Drain-to-Source Voltage (Vdss) and 5.2A Continuous Drain Current (ID). Offers 800mΩ Drain-to-Source On-Resistance (Rds On Max) and 50W Max Power Dissipation. Includes fast switching characteristics with a 4.2ns Turn-On Delay Time and 17ns Fall Time. Designed for surface mounting with a single element and silicon metal-oxide semiconductor construction.
Vishay IRL620S technical specifications.
Download the complete datasheet for Vishay IRL620S to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.