N-Channel Power MOSFET, D2PAK package, featuring 200V Drain-to-Source Voltage (Vdss) and 5.2A Continuous Drain Current (ID). Offers 800mΩ Drain-to-Source On-Resistance (Rds On Max) and 50W Max Power Dissipation. Includes fast switching characteristics with a 4.2ns Turn-On Delay Time and 17ns Fall Time. Designed for surface mounting with a single element and silicon metal-oxide semiconductor construction.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRL620S technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
5.2A
Drain to Source Resistance
800mR
Drain to Source Voltage (Vdss)
200V
Fall Time
17ns
Gate to Source Voltage (Vgs)
10V
Height
4.83mm
Input Capacitance
360pF
Lead Free
Contains Lead
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Mount
Surface Mount
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
800mR
RoHS Compliant
No
Turn-Off Delay Time
18ns
Turn-On Delay Time
4.2ns
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRL620S Datasheet
Download the complete datasheet for Vishay IRL620S to view detailed technical specifications.
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