N-Channel Power MOSFET, 200V Vdss, 9A Continuous Drain Current (ID), and 400mΩ Max Drain-Source On-Resistance. This silicon metal-oxide semiconductor FET features a TO-220AB through-hole package, 74W max power dissipation, and operates from -55°C to 150°C. Key switching characteristics include an 8ns turn-on delay and 33ns fall time. RoHS compliant.
PackageTO-220AB
MountingThrough Hole
PolarityN-CHANNEL
Power74W
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Technical Specifications
Vishay IRL630PBF technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Resistance | 400mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 400mR |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 9.01mm |
| Input Capacitance | 1.1nF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 74W |
| Mount | Through Hole |
| Nominal Vgs | 2V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 74W |
| Radiation Hardening | No |
| Rds On Max | 400mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.211644oz |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRL630PBF Datasheet
Download the complete datasheet for Vishay IRL630PBF to view detailed technical specifications.
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