N-Channel Power MOSFET, featuring 200V drain-source breakdown voltage and 9A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 400mΩ Rds On and 74W maximum power dissipation. Designed for surface mounting in a D2PAK package, it operates within a temperature range of -55°C to 150°C. Key switching characteristics include an 8ns turn-on delay and 33ns fall time.
PackageD2PAK
Current Rating9A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRL630S technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 9A |
| Current Rating | 9A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 400mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 4.83mm |
| Input Capacitance | 1.1nF |
| Lead Free | Contains Lead |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 74W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 74W |
| Rds On Max | 400mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 8ns |
| DC Rated Voltage | 200V |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IRL630S Datasheet
Download the complete datasheet for Vishay IRL630S to view detailed technical specifications.
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