N-Channel Power MOSFET featuring 200V drain-source voltage and 9A continuous drain current. This silicon Metal-Oxide-Semiconductor FET offers a low 400mΩ drain-to-source resistance. Designed for surface mounting in a D2PAK package, it operates with a 10V gate-source voltage and exhibits fast switching characteristics with an 8ns turn-on delay and 33ns fall time. Maximum power dissipation is rated at 74W, with an operating temperature range of -55°C to 150°C.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRL630STRR technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
9A
Drain to Source Resistance
400mR
Drain to Source Voltage (Vdss)
200V
Fall Time
33ns
Gate to Source Voltage (Vgs)
10V
Height
4.83mm
Input Capacitance
1.1nF
Lead Free
Contains Lead
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
74W
Mount
Surface Mount
Number of Channels
1
Package Quantity
800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
400mR
RoHS Compliant
No
Turn-Off Delay Time
38ns
Turn-On Delay Time
8ns
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRL630STRR Datasheet
Download the complete datasheet for Vishay IRL630STRR to view detailed technical specifications.
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