N-Channel Power MOSFET, 200V Drain-Source Voltage (Vdss), 17A Continuous Drain Current (ID), and 0.18ohm Drain-to-Source Resistance (Rds On Max). This single-element silicon Metal-Oxide-Semiconductor FET features a 10V Gate-to-Source Voltage (Vgs) and a maximum power dissipation of 125W. Designed for surface mounting, it comes in a D2PAK package with dimensions of 10.67mm length, 9.65mm width, and 4.83mm height. Operating temperature range is -55°C to 150°C.
PackageD2PAK
Current Rating17A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRL640S technical specifications.
General
Package/Case
D2PAK
Continuous Drain Current (ID)
17A
Current Rating
17A
Drain to Source Resistance
180mR
Drain to Source Voltage (Vdss)
200V
Fall Time
52ns
Gate to Source Voltage (Vgs)
10V
Height
4.83mm
Input Capacitance
1.8nF
Lead Free
Contains Lead
Length
10.67mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Surface Mount
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
180mR
RoHS Compliant
No
Turn-Off Delay Time
44ns
Turn-On Delay Time
8ns
DC Rated Voltage
200V
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRL640S Datasheet
Download the complete datasheet for Vishay IRL640S to view detailed technical specifications.
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