N-Channel Power MOSFET, 200V Drain-Source Voltage (Vdss), 17A Continuous Drain Current (ID), and 0.18ohm Drain-to-Source Resistance (Rds On Max). This single-element silicon Metal-Oxide-Semiconductor FET features a 10V Gate-to-Source Voltage (Vgs) and a maximum power dissipation of 125W. Designed for surface mounting, it comes in a D2PAK package with dimensions of 10.67mm length, 9.65mm width, and 4.83mm height. Operating temperature range is -55°C to 150°C.
PackageD2PAK
Current Rating17A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRL640S technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 17A |
| Current Rating | 17A |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 52ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 4.83mm |
| Input Capacitance | 1.8nF |
| Lead Free | Contains Lead |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 180mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 44ns |
| Turn-On Delay Time | 8ns |
| DC Rated Voltage | 200V |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IRL640S Datasheet
Download the complete datasheet for Vishay IRL640S to view detailed technical specifications.
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