
N-Channel Power MOSFET, 200V Drain-Source Voltage (Vdss), 17A Continuous Drain Current (ID), and 0.18ohm Drain-to-Source Resistance (Rds On Max). This single-element silicon Metal-Oxide-Semiconductor FET features a 10V Gate-to-Source Voltage (Vgs) and a maximum power dissipation of 125W. Designed for surface mounting, it comes in a D2PAK package with dimensions of 10.67mm length, 9.65mm width, and 4.83mm height. Operating temperature range is -55°C to 150°C.
Vishay IRL640S technical specifications.
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