N-Channel Power MOSFET, 200V Drain-Source Voltage, 17A Continuous Drain Current, and 0.18ohm Drain-Source On-Resistance. Features include a 1.8nF input capacitance, 8ns turn-on delay, and 44ns turn-off delay. This silicon, metal-oxide semiconductor FET operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 3.1W. Designed for surface mounting, it is packaged in a D2PAK case and is RoHS compliant.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power3.1W
Quick Jump:
Technical Specifications
Vishay IRL640SPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 180mR |
| Fall Time | 52ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 4.83mm |
| Input Capacitance | 1.8nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.1W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.1W |
| Radiation Hardening | No |
| Rds On Max | 180mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 44ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRL640SPBF Datasheet
Download the complete datasheet for Vishay IRL640SPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
