N-Channel Power MOSFET featuring 200V drain-source voltage and 17A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 0.18 ohm drain-source on-resistance and is designed for surface mounting in a D2PAK package. Key specifications include a 10V gate-source voltage, 150°C maximum operating temperature, and 104W maximum power dissipation. It boasts fast switching characteristics with an 8ns turn-on delay and 44ns turn-off delay, and is RoHS compliant.
PackageD2PAK
Voltage200V
Current17A
MountingSurface Mount
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Technical Specifications
Vishay IRL640STRLPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 17A |
| Current | 17A |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 180mR |
| Fall Time | 52ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 4.83mm |
| Input Capacitance | 4.39nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 104W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.1W |
| Radiation Hardening | No |
| Rds On Max | 2.7mR |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Turn-Off Delay Time | 44ns |
| Turn-On Delay Time | 8ns |
| Voltage | 200V |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRL640STRLPBF Datasheet
Download the complete datasheet for Vishay IRL640STRLPBF to view detailed technical specifications.
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