N-Channel Power MOSFET, featuring a 200V drain-source voltage and 17A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 180mΩ drain-source on-resistance. Designed for surface mounting in a D2PAK package, it operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 125W. Key switching characteristics include an 8ns turn-on delay and a 52ns fall time. RoHS compliant and supplied on tape and reel.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRL640STRRPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Resistance | 180mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 180mR |
| Fall Time | 52ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 4.83mm |
| Input Capacitance | 1.8nF |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 180mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 44ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRL640STRRPBF Datasheet
Download the complete datasheet for Vishay IRL640STRRPBF to view detailed technical specifications.
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