N-Channel Power MOSFET, 60V Vdss, 2.5A continuous drain current. Features 0.1ohm Rds On, 1.3W power dissipation, and 110ns fall time. Operates from -55°C to 175°C with 870pF input capacitance. Packaged in a DIP for through-hole mounting.
PackageDIP
Current Rating2.5A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRLD024 technical specifications.
General
Package/Case
DIP
Continuous Drain Current (ID)
2.5A
Current Rating
2.5A
Drain to Source Resistance
100mR
Drain to Source Voltage (Vdss)
60V
Fall Time
110ns
Gate to Source Voltage (Vgs)
10V
Height
3.37mm
Input Capacitance
870pF
Lead Free
Contains Lead
Length
5mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.3W
Mount
Through Hole
Number of Channels
1
Number of Elements
1
Package Quantity
2500
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
1.3W
Rds On Max
100mR
RoHS Compliant
No
Turn-Off Delay Time
23ns
Turn-On Delay Time
11ns
DC Rated Voltage
60V
Width
6.29mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRLD024 Datasheet
Download the complete datasheet for Vishay IRLD024 to view detailed technical specifications.
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