N-channel Silicon Metal-oxide Semiconductor FET designed for small signal applications. Features a 100V Drain to Source Breakdown Voltage (Vdss) and a maximum continuous drain current (ID) of 1A. Offers a low Drain-source On Resistance (Rds On) of 540mR. Operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 1.3W. Packaged in a 4-pin DIP for through-hole mounting, this RoHS compliant component boasts fast switching times with a turn-on delay of 9.3ns and a fall time of 47ns.
PackageDIP
Current Rating1A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRLD110PBF technical specifications.
General
| Package/Case | DIP |
| Continuous Drain Current (ID) | 1A |
| Current Rating | 1A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 540mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 540mR |
| Fall Time | 47ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 3.37mm |
| Input Capacitance | 250pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.3W |
| Mount | Through Hole |
| Nominal Vgs | 2V |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 1.3W |
| Radiation Hardening | No |
| Rds On Max | 540mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 9.3ns |
| DC Rated Voltage | 100V |
| Width | 6.29mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRLD110PBF Datasheet
Download the complete datasheet for Vishay IRLD110PBF to view detailed technical specifications.
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