IRLD120

N-Channel Power Field-Effect Transistor, 100V Drain-Source Voltage, 1.3A Continuous Drain Current, and 270mΩ Max Drain-Source On Resistance. This silicon Metal-oxide Semiconductor FET features a 1-element configuration, 10V Gate-to-Source Voltage, and 490pF Input Capacitance. Designed for through-hole mounting in a DIP package, it offers a maximum power dissipation of 1.3W and operates within a temperature range of -55°C to 175°C. Switching characteristics include a 9.8ns turn-on delay and 64ns fall time.