N-Channel Power MOSFET, TO-220-3 package, featuring a 100V drain-source breakdown voltage and a continuous drain current of 7.2A. This silicon metal-oxide semiconductor FET offers a low on-resistance of 270mΩ at a 10V gate-source voltage. With a maximum power dissipation of 37W and operating temperatures from -55°C to 175°C, it is suitable for through-hole mounting. Key switching characteristics include a turn-on delay of 9.8ns and a fall time of 27ns.
PackageTO-220-3
Current Rating7.2A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRLI520G technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 7.2A |
| Current Rating | 7.2A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 270mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 9.8mm |
| Input Capacitance | 490pF |
| Lead Free | Contains Lead |
| Length | 10.63mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 37W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 37W |
| Radiation Hardening | No |
| Rds On Max | 270mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 9.8ns |
| Weight | 0.211644oz |
| Width | 4.83mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay IRLI520G Datasheet
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