N-Channel Power MOSFET featuring 100V drain-source voltage and 7.2A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 270mΩ drain-source resistance. Designed for through-hole mounting in a TO-220AB package, it operates from -55°C to 175°C with a maximum power dissipation of 37W. Key switching characteristics include a 9.8ns turn-on delay and 27ns fall time.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRLI520GPBF technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 7.2A |
| Drain to Source Resistance | 270mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 9.8mm |
| Input Capacitance | 490pF |
| Lead Free | Lead Free |
| Length | 10.63mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 37W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 270mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 9.8ns |
| Weight | 0.211644oz |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRLI520GPBF Datasheet
Download the complete datasheet for Vishay IRLI520GPBF to view detailed technical specifications.
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