N-Channel Power MOSFET featuring 100V Drain-Source Voltage and 17A Continuous Drain Current. This silicon Metal-Oxide Semiconductor FET offers a low 77mΩ Drain-Source On-Resistance. Designed for through-hole mounting in a TO-220AB package, it operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 48W. Key switching characteristics include an 8.5ns turn-on delay and 35ns turn-off delay.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRLI540G technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Resistance | 77mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 80ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 9.8mm |
| Input Capacitance | 2.2nF |
| Lead Free | Contains Lead |
| Length | 10.63mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 48W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 77mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 8.5ns |
| Weight | 0.211644oz |
| Width | 4.83mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Vishay IRLI540G Datasheet
Download the complete datasheet for Vishay IRLI540G to view detailed technical specifications.
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