IRLIZ34G

N-Channel Power MOSFET, 60V Drain-Source Voltage, 20A Continuous Drain Current, and 50mΩ Drain-to-Source Resistance. This silicon Metal-Oxide Semiconductor FET features a TO-220AB package with through-hole mounting. Key electrical characteristics include a 10V Gate-Source Voltage, 1.6nF input capacitance, and switching times of 14ns (turn-on delay), 56ns (fall time), and 30ns (turn-off delay). Maximum power dissipation is 42W, with an operating temperature range of -55°C to 175°C.