
N-Channel Power MOSFET, 60V Drain-Source Voltage, 20A Continuous Drain Current, and 50mΩ Drain-to-Source Resistance. This silicon Metal-Oxide Semiconductor FET features a TO-220AB package with through-hole mounting. Key electrical characteristics include a 10V Gate-Source Voltage, 1.6nF input capacitance, and switching times of 14ns (turn-on delay), 56ns (fall time), and 30ns (turn-off delay). Maximum power dissipation is 42W, with an operating temperature range of -55°C to 175°C.
Vishay IRLIZ34G technical specifications.
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 20A |
| Current Rating | 20A |
| Drain to Source Resistance | 50mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 56ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 9.8mm |
| Input Capacitance | 1.6nF |
| Lead Free | Contains Lead |
| Length | 10.63mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 50mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 14ns |
| DC Rated Voltage | 60V |
| Weight | 0.211644oz |
| Width | 4.83mm |
| RoHS | Not CompliantNo |
Download the complete datasheet for Vishay IRLIZ34G to view detailed technical specifications.
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