N-Channel Power MOSFET, 60V Vdss, 20A Continuous Drain Current (ID), and 50mR Drain-Source On-Resistance (Rds On). Features a 2V nominal Gate-Source Voltage (Vgs) and 2V Threshold Voltage. Operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 42W. Packaged in a TO-220AB through-hole mount, this silicon metal-oxide semiconductor FET is RoHS compliant.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRLIZ34GPBF technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 20A |
| Drain to Source Resistance | 50mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 50mR |
| Fall Time | 56ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 9.8mm |
| Input Capacitance | 1.6nF |
| Lead Free | Lead Free |
| Length | 10.63mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Through Hole |
| Nominal Vgs | 2V |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 50mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 14ns |
| Weight | 0.211644oz |
| Width | 4.83mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRLIZ34GPBF Datasheet
Download the complete datasheet for Vishay IRLIZ34GPBF to view detailed technical specifications.
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