N-Channel Power MOSFET, 60V Drain-Source Voltage, 2.7A Continuous Drain Current, and 0.2 Ohm Drain-Source On-Resistance. This single-element silicon Metal-Oxide Semiconductor FET features a TO-261AA (SOIC-4) package, suitable for surface mounting. Operating temperature range is -55°C to 150°C with a maximum power dissipation of 3.1W. Key switching characteristics include a 9.3ns turn-on delay and 26ns fall time.
PackageSOT-223
Voltage55V
Current2A
Current Rating2.7A
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Technical Specifications
Vishay IRLL014TR technical specifications.
General
Package/Case
SOT-223
Continuous Drain Current (ID)
2.7A
Current
2A
Current Rating
2.7A
Drain to Source Resistance
200mR
Drain to Source Voltage (Vdss)
60V
Fall Time
26ns
Gate to Source Voltage (Vgs)
10V
Height
1.8mm
Input Capacitance
400pF
Lead Free
Contains Lead
Length
6.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.1W
Mount
Surface Mount
Number of Channels
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
200mR
RoHS Compliant
No
Turn-Off Delay Time
17ns
Turn-On Delay Time
9.3ns
Voltage
55V
DC Rated Voltage
60V
Weight
0.008826oz
Width
3.7mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRLL014TR Datasheet
Download the complete datasheet for Vishay IRLL014TR to view detailed technical specifications.
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