IRLL014TRPBF

N-Channel MOSFET, 60V, 2.7A, 200mR, SOT-223

N-Channel Power MOSFET, 60V Drain-Source Voltage, 2.7A Continuous Drain Current, and 200mΩ Max Drain-Source On-Resistance. This silicon Metal-oxide Semiconductor FET features a TO-261AA (SOT-223) surface mount package, 2W power dissipation, and 400pF input capacitance. Optimized for switching applications with fast turn-on (9.3ns) and turn-off (17ns) delay times, it operates from -55°C to 150°C and is RoHS compliant.

PackageSOT-223

Voltage55V

Current2A

MountingSurface Mount

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Technical Specifications

Vishay IRLL014TRPBF technical specifications.

General

Package/Case	SOT-223
Continuous Drain Current (ID)	2.7A
Current	2A
Drain to Source Resistance	200mR
Drain to Source Voltage (Vdss)	60V
Drain-source On Resistance-Max	200mR
Fall Time	26ns
Gate to Source Voltage (Vgs)	10V
Height	1.8mm
Input Capacitance	400pF
Lead Free	Lead Free
Length	6.7mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2W
Mount	Surface Mount
Nominal Vgs	1V
Number of Channels	1
Number of Elements	1
Package Quantity	1
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	2W
Radiation Hardening	No
Rds On Max	200mR
Reach SVHC Compliant	Unknown
RoHS Compliant	Yes
Threshold Voltage	2V
Turn-Off Delay Time	17ns
Turn-On Delay Time	9.3ns
Voltage	55V
Weight	0.008826oz
Width	3.7mm