Vishay
IRLR024
Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRLR024 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
14A
Drain to Source Resistance
100mR
Drain to Source Voltage (Vdss)
60V
Fall Time
41ns
Gate to Source Voltage (Vgs)
10V
Input Capacitance
870pF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
42W
Mount
Surface Mount
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
100mR
RoHS Compliant
No
Turn-Off Delay Time
23ns
Turn-On Delay Time
11ns
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRLR024 Datasheet
Download the complete datasheet for Vishay IRLR024 to view detailed technical specifications.
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