N-Channel Power MOSFET, 60V Drain-Source Voltage, 14A Continuous Drain Current, and 100mΩ Drain-Source On-Resistance. This single-element silicon Metal-Oxide Semiconductor FET features a TO-252 DPAK surface-mount package. Key electrical characteristics include 870pF input capacitance, 41ns fall time, 23ns turn-off delay, and 11ns turn-on delay. Maximum power dissipation is 2.5W, with operating temperatures ranging from -55°C to 150°C. This component is RoHS compliant and supplied on tape and reel.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Vishay IRLR024PBF technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Resistance | 100mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 41ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 2.39mm |
| Input Capacitance | 870pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 11ns |
| Weight | 0.050717oz |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRLR024PBF Datasheet
Download the complete datasheet for Vishay IRLR024PBF to view detailed technical specifications.
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