N-Channel Power MOSFET, DPAK package, featuring 100V drain-source breakdown voltage and 4.3A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 540mΩ drain-source on-resistance at 10V gate-source voltage. Designed for surface mounting, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Key switching characteristics include a 9.3ns turn-on delay and 16ns turn-off delay, with a 17ns fall time.
PackageDPAK
Current Rating4.3A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRLR110PBF technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 4.3A |
| Current Rating | 4.3A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 540mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 540MR |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 2.39mm |
| Input Capacitance | 250pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 540mR |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 9.3ns |
| DC Rated Voltage | 100V |
| Weight | 0.050717oz |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRLR110PBF Datasheet
Download the complete datasheet for Vishay IRLR110PBF to view detailed technical specifications.
No datasheet is available for this part.
Product Images
