N-Channel Power MOSFET, 100V Vdss, 4.3A continuous drain current, and 0.54ohm Rds On. Features include a 25W max power dissipation, 17ns fall time, and 9.3ns turn-on delay. This silicon Metal-oxide Semiconductor FET is housed in a TO-252 DPAK package for surface mounting. Operating temperature range is -55°C to 150°C.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRLR110TRLPBF technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 4.3A |
| Drain to Source Resistance | 540mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 2.39mm |
| Input Capacitance | 250pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 25W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 540mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 9.3ns |
| Weight | 0.050717oz |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRLR110TRLPBF Datasheet
Download the complete datasheet for Vishay IRLR110TRLPBF to view detailed technical specifications.
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