N-Channel Power MOSFET, 100V Drain-Source Voltage (Vdss), 4.3A Continuous Drain Current (ID), and 540mΩ maximum Drain-Source On-Resistance (Rds On). This silicon Metal-oxide Semiconductor FET features a 2V threshold voltage and 250pF input capacitance. Designed for surface mounting in a DPAK package, it offers a maximum power dissipation of 2.5W and operates within a temperature range of -55°C to 150°C. RoHS compliant and lead-free, this component is supplied on tape and reel.
PackageDPAK
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Vishay IRLR110TRPBF technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 4.3A |
| Drain to Source Resistance | 540mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 540mR |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 2.39mm |
| Input Capacitance | 250pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 540mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 2V |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 9.3ns |
| Weight | 0.050717oz |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRLR110TRPBF Datasheet
Download the complete datasheet for Vishay IRLR110TRPBF to view detailed technical specifications.
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