Vishay
IRLR120
Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRLR120 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 7.7A |
| Drain to Source Resistance | 270mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 10V |
| Input Capacitance | 490pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 270mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 9.8ns |
Compliance
| RoHS | Not Compliant |
Datasheet
Vishay IRLR120 Datasheet
Download the complete datasheet for Vishay IRLR120 to view detailed technical specifications.
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