
N-channel MOSFET transistor with 100V drain-source voltage and 7.7A continuous drain current. Features 270mΩ drain-source resistance at 10V gate-source voltage. This through-hole mounted component is housed in a TO-251-3 (IPAK) package, offering a maximum power dissipation of 42W and operating temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 9.8ns and fall time of 27ns. RoHS compliant and lead-free.
Vishay IRLU120PBF technical specifications.
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 7.7A |
| Drain to Source Resistance | 270mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 6.22mm |
| Input Capacitance | 490pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 270mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 9.8ns |
| Weight | 0.01164oz |
| Width | 2.38mm |
| RoHS | Compliant |
Download the complete datasheet for Vishay IRLU120PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
