N-channel MOSFET transistor with 100V drain-source voltage and 7.7A continuous drain current. Features 270mΩ drain-source resistance at 10V gate-source voltage. This through-hole mounted component is housed in a TO-251-3 (IPAK) package, offering a maximum power dissipation of 42W and operating temperature range of -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 9.8ns and fall time of 27ns. RoHS compliant and lead-free.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay IRLU120PBF technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
7.7A
Drain to Source Resistance
270mR
Drain to Source Voltage (Vdss)
100V
Fall Time
27ns
Gate to Source Voltage (Vgs)
10V
Height
6.22mm
Input Capacitance
490pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
42W
Mount
Through Hole
Number of Channels
1
Package Quantity
3000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
270mR
RoHS Compliant
Yes
Turn-Off Delay Time
21ns
Turn-On Delay Time
9.8ns
Weight
0.01164oz
Width
2.38mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRLU120PBF Datasheet
Download the complete datasheet for Vishay IRLU120PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
