N-Channel Power MOSFET, TO-220-3 package, featuring 60V drain-source breakdown voltage and 10A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 200mΩ drain-source on-resistance. With a maximum power dissipation of 43W and operating temperatures from -55°C to 175°C, it includes fast switching characteristics with turn-on delay of 9.3ns and fall time of 26ns. Designed for through-hole mounting, this 1-element transistor has an input capacitance of 400pF.
PackageTO-220-3
Current Rating10A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay IRLZ14 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
10A
Current Rating
10A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
200mR
Drain to Source Voltage (Vdss)
60V
Fall Time
26ns
Gate to Source Voltage (Vgs)
10V
Height
9.01mm
Input Capacitance
400pF
Lead Free
Contains Lead
Length
10.41mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
43W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
200mR
RoHS Compliant
No
Turn-Off Delay Time
17ns
Turn-On Delay Time
9.3ns
DC Rated Voltage
60V
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRLZ14 Datasheet
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