N-Channel Power MOSFET, featuring a 60V drain-source voltage and 10A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 200mΩ drain-source on-resistance. Designed for surface mounting in a TO-263-3 package, it operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include a 9.3ns turn-on delay and 17ns turn-off delay, with an input capacitance of 400pF. This RoHS compliant component is suitable for various power applications.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRLZ14SPBF technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
10A
Drain to Source Resistance
200mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
200mR
Fall Time
26ns
Gate to Source Voltage (Vgs)
10V
Height
4.83mm
Input Capacitance
400pF
Lead Free
Lead Free
Length
10.41mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
3.7W
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
200mR
RoHS Compliant
Yes
Turn-Off Delay Time
17ns
Turn-On Delay Time
9.3ns
Weight
0.050717oz
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
Vishay IRLZ14SPBF Datasheet
Download the complete datasheet for Vishay IRLZ14SPBF to view detailed technical specifications.
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