N-Channel Power MOSFET, featuring a 60V drain-source voltage and 10A continuous drain current. This silicon Metal-oxide Semiconductor FET offers a low 200mΩ drain-source on-resistance. Designed for surface mounting in a TO-263-3 package, it operates across a wide temperature range from -55°C to 175°C. Key switching characteristics include a 9.3ns turn-on delay and 17ns turn-off delay, with an input capacitance of 400pF. This RoHS compliant component is suitable for various power applications.
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRLZ14SPBF technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 200mR |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 4.83mm |
| Input Capacitance | 400pF |
| Lead Free | Lead Free |
| Length | 10.41mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.7W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 200mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 9.3ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRLZ14SPBF Datasheet
Download the complete datasheet for Vishay IRLZ14SPBF to view detailed technical specifications.
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