N-Channel Power MOSFET, 60V Drain-Source Voltage, 10A Continuous Drain Current, and 200mΩ Drain-Source Resistance. This silicon Metal-Oxide-Semiconductor FET features a TO-263AB (D2PAK) surface-mount package, ideal for demanding applications. With a maximum power dissipation of 43W and operating temperatures from -55°C to 175°C, it offers robust performance. Key switching characteristics include a 9.3ns turn-on delay and 26ns fall time, with an input capacitance of 400pF. RoHS compliant and packaged on tape and reel.
PackageD2PAK
MountingSurface Mount
PolarityN-CHANNEL
Power3.7W
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Technical Specifications
Vishay IRLZ14STRRPBF technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Resistance | 200mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 26ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 4.83mm |
| Input Capacitance | 400pF |
| Length | 10.41mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 43W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.7W |
| Radiation Hardening | No |
| Rds On Max | 200mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 9.3ns |
| Weight | 0.050717oz |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRLZ14STRRPBF Datasheet
Download the complete datasheet for Vishay IRLZ14STRRPBF to view detailed technical specifications.
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