N-Channel Power MOSFET, 60V Vdss, 17A continuous drain current, and 100mΩ Rds On. This silicon Metal-Oxide Semiconductor FET features a TO-220-3 package for through-hole mounting. Key electrical characteristics include 870pF input capacitance, 41ns fall time, 23ns turn-off delay, and 11ns turn-on delay. Maximum power dissipation is 60W, with an operating temperature range of -55°C to 175°C.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power60W
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Technical Specifications
Vishay IRLZ24 technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
17A
Drain to Source Resistance
100mR
Drain to Source Voltage (Vdss)
60V
Fall Time
41ns
Gate to Source Voltage (Vgs)
10V
Height
9.01mm
Input Capacitance
870pF
Lead Free
Contains Lead
Length
10.41mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
60W
Mount
Through Hole
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
60W
Radiation Hardening
No
Rds On Max
100mR
RoHS Compliant
No
Turn-Off Delay Time
23ns
Turn-On Delay Time
11ns
Weight
0.211644oz
Width
4.7mm
Compliance
RoHS
Not CompliantNo
Datasheet
Vishay IRLZ24 Datasheet
Download the complete datasheet for Vishay IRLZ24 to view detailed technical specifications.
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