Vishay
IRLZ34SPBF
Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3
PackageTO-263-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRLZ34SPBF technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 30A |
| Drain to Source Resistance | 50mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 50MR |
| Fall Time | 56ns |
| FET Type | 1 N-Channel |
| Gate to Source Voltage (Vgs) | 10V |
| Input Capacitance | 1.6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.7W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 50mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 14ns |
Compliance
| RoHS | Compliant |
Datasheet
Vishay IRLZ34SPBF Datasheet
Download the complete datasheet for Vishay IRLZ34SPBF to view detailed technical specifications.
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