
N-Channel Power MOSFET, 60V Vdss, 50A Continuous Drain Current (ID). Features 28mΩ Rds On Max, 150W Max Power Dissipation, and 175°C Max Operating Temperature. This single-element silicon FET utilizes Metal-oxide Semiconductor technology, packaged in a TO-263AB (D2PAK-3) surface-mount configuration. Includes fast switching characteristics with turn-on delay of 17ns and fall time of 110ns.
Vishay IRLZ44S technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 50A |
| Current Rating | 50A |
| Drain to Source Resistance | 28mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 4.83mm |
| Input Capacitance | 3.3nF |
| Lead Free | Contains Lead |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Rds On Max | 28mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 42ns |
| Turn-On Delay Time | 17ns |
| DC Rated Voltage | 60V |
| Weight | 0.050717oz |
| Width | 9.02mm |
| RoHS | Not Compliant |
Download the complete datasheet for Vishay IRLZ44S to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
