N-Channel Power MOSFET, 60V Vdss, 50A Continuous Drain Current (ID). Features 28mΩ Rds On Max, 150W Max Power Dissipation, and 175°C Max Operating Temperature. This single-element silicon FET utilizes Metal-oxide Semiconductor technology, packaged in a TO-263AB (D2PAK-3) surface-mount configuration. Includes fast switching characteristics with turn-on delay of 17ns and fall time of 110ns.
PackageTO-263-3
Current Rating50A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay IRLZ44S technical specifications.
General
Package/Case
TO-263-3
Continuous Drain Current (ID)
50A
Current Rating
50A
Drain to Source Resistance
28mR
Drain to Source Voltage (Vdss)
60V
Fall Time
110ns
Gate to Source Voltage (Vgs)
10V
Height
4.83mm
Input Capacitance
3.3nF
Lead Free
Contains Lead
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
150W
Mount
Surface Mount
Number of Channels
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Rds On Max
28mR
RoHS Compliant
No
Turn-Off Delay Time
42ns
Turn-On Delay Time
17ns
DC Rated Voltage
60V
Weight
0.050717oz
Width
9.02mm
Compliance
RoHS
Not Compliant
Datasheet
Vishay IRLZ44S Datasheet
Download the complete datasheet for Vishay IRLZ44S to view detailed technical specifications.
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