Vishay
J211-E3
RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Junction FET, TO-226AA, PLASTIC, TO-92, 3 PIN
PackageTO-92
MountingThrough Hole
PolarityN-CHANNEL
Power350mW
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Technical Specifications
Vishay J211-E3 technical specifications.
General
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 20mA |
| Gate to Source Voltage (Vgs) | -25V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 350mW |
| RoHS Compliant | Yes |
| Weight | 0.016oz |
Compliance
| RoHS | Compliant |
Datasheet
Vishay J211-E3 Datasheet
Download the complete datasheet for Vishay J211-E3 to view detailed technical specifications.
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