The J309-E3 is a TO-92 packaged N-channel MOSFET with a continuous drain current of 30mA and a power dissipation of 350mW. It operates over a temperature range of -55°C to 150°C and is available in quantities of 500 in rail/Tube packaging. The device is RoHS compliant and features a drain to source resistance of 35R and a gate to source voltage of -25V.
PackageTO-92
Current Rating10mA
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Vishay J309-E3 technical specifications.
General
| Package/Case | TO-92 |
| Continuous Drain Current (ID) | 30mA |
| Current Rating | 10mA |
| Drain to Source Resistance | 35R |
| Gate to Source Voltage (Vgs) | -25V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Package Quantity | 500 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 350mW |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Vishay J309-E3 Datasheet
Download the complete datasheet for Vishay J309-E3 to view detailed technical specifications.
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