Single-phase bridge rectifier diode with a maximum repetitive peak reverse voltage of 600V and a minimum breakdown voltage of 600V. This 4-terminal, 4-element silicon diode operates within a temperature range of -50°C to 150°C. Packaged in a TO-269AA (4-pin) JEDEC package, it is suitable for applications requiring efficient AC to DC conversion.
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Technical Specifications
Vishay MB6S-E3/80 technical specifications.
General
Max Operating Temperature
150
Number of Terminals
4
Min Operating Temperature
-50
Terminal Position
DUAL
JEDEC Package Code
TO-269AA
Pin Count
4
Number of Elements
4
Diode Element Material
SILICON
Diode Type
BRIDGE RECTIFIER DIODE
Rep Pk Reverse Voltage-Max
600
Breakdown Voltage-Min
600
Compliance
Eccn Code
EAR99
Lead Free
Yes
HTS Code
8541.10.00.70
REACH
unknown
Military Spec
False
Datasheet
Vishay MB6S-E3/80 Datasheet
Download the complete datasheet for Vishay MB6S-E3/80 to view detailed technical specifications.
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