N-channel JFET for small signal applications. Features 20V drain-to-source breakdown voltage and 600mA continuous drain current. Offers 700mΩ drain-to-source resistance and 800mV threshold voltage. Operates across a -55°C to 150°C temperature range with 150mW maximum power dissipation. Packaged in a 3-pin SC-75A surface-mount package.
PackageSC
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Vishay SI1012R-T1-E3 technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
600mA
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
700mR
Drain to Source Voltage (Vdss)
20V
Fall Time
5ns
Gate to Source Voltage (Vgs)
6V
Height
0.7mm
Lead Free
Lead Free
Length
1.58mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150mW
Mount
Surface Mount
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Rds On Max
700mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
800mV
Turn-Off Delay Time
25ns
Turn-On Delay Time
5ns
Width
0.76mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1012R-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1012R-T1-E3 to view detailed technical specifications.
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