N-channel JFET for small signal applications. Features 20V drain-to-source breakdown voltage and 600mA continuous drain current. Offers 700mΩ drain-to-source resistance and 800mV threshold voltage. Operates across a -55°C to 150°C temperature range with 150mW maximum power dissipation. Packaged in a 3-pin SC-75A surface-mount package.
PackageSC
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Vishay SI1012R-T1-E3 technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 600mA |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 700mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 6V |
| Height | 0.7mm |
| Lead Free | Lead Free |
| Length | 1.58mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 700mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | TrenchFET® |
| Threshold Voltage | 800mV |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 5ns |
| Width | 0.76mm |
Compliance
| RoHS | Compliant |
Datasheet
Vishay SI1012R-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1012R-T1-E3 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.