N-channel, general-purpose small signal MOSFET with a 20V drain-source voltage and 500mA continuous drain current. Features a low 700mΩ drain-source on-resistance and fast switching times with 5ns turn-on and 25ns turn-off delays. Housed in a compact 3-pin SC-75A (SOT-416) surface-mount package, this component operates from -55°C to 150°C with a maximum power dissipation of 150mW. It is halogen-free and RoHS compliant.
PackageSOT-416
MountingSurface Mount
PolarityN-CHANNEL
Power150mW
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Technical Specifications
Vishay SI1012R-T1-GE3 technical specifications.
General
Package/Case
SOT-416
Continuous Drain Current (ID)
500mA
Drain to Source Resistance
700mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
700MR
Fall Time
5ns
Gate to Source Voltage (Vgs)
6V
Height
0.7mm
Lead Free
Lead Free
Length
1.58mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
150mW
Rds On Max
700mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
900mV
Turn-Off Delay Time
25ns
Turn-On Delay Time
5ns
Width
0.76mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1012R-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1012R-T1-GE3 to view detailed technical specifications.
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