N-channel MOSFET with 20V drain-source breakdown voltage and 500mA continuous drain current. Features 700mΩ maximum drain-source on-resistance and 5ns turn-on delay. Operates within a -55°C to 150°C temperature range, with 250mW maximum power dissipation. Packaged in a compact SC-89-3 surface-mount case, suitable for tape and reel applications.
PackageSC
MountingSurface Mount
PolarityN-CHANNEL
Power250mW
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Technical Specifications
Vishay SI1012X-T1-E3 technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
500mA
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
700mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
700mR
Dual Supply Voltage
20V
Fall Time
5ns
Gate to Source Voltage (Vgs)
6V
Height
0.8mm
Lead Free
Lead Free
Length
1.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250mW
Mount
Surface Mount
Nominal Vgs
900mV
Number of Channels
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
250mW
Rds On Max
700mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
TrenchFET®
Termination
SMD/SMT
Threshold Voltage
900mV
Turn-Off Delay Time
25ns
Turn-On Delay Time
5ns
Weight
0.001058oz
Width
0.95mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1012X-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1012X-T1-E3 to view detailed technical specifications.
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