N-channel, small-signal JFET transistor for general-purpose applications. Features 20V drain-source voltage, 500mA continuous drain current, and 700mΩ maximum drain-source on-resistance. Operates from -55°C to 150°C with 250mW maximum power dissipation. Packaged in a 3-pin SC-89 surface-mount case, this device offers fast switching with 5ns turn-on and fall times. RoHS and halogen-free compliant.
PackageSC
MountingSurface Mount
PolarityN-CHANNEL
Power250mW
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Technical Specifications
Vishay SI1012X-T1-GE3 technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
500mA
Drain to Source Resistance
700mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
700mR
Fall Time
5ns
Gate to Source Voltage (Vgs)
6V
Height
0.8mm
Lead Free
Lead Free
Length
1.7mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250mW
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
250mW
Radiation Hardening
No
Rds On Max
700mR
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
TrenchFET®
Threshold Voltage
900mV
Turn-Off Delay Time
25ns
Turn-On Delay Time
5ns
Weight
0.001058oz
Width
0.95mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1012X-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1012X-T1-GE3 to view detailed technical specifications.
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