P-channel, small-signal MOSFET for general-purpose applications. Features a continuous drain current of 350mA and a drain-to-source breakdown voltage of -20V. Offers a low drain-source on-resistance of 1.2 Ohms. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 150mW. Packaged in a compact SOT-416 (SC-75A) surface-mount case.
PackageSOT-416
MountingSurface Mount
PolarityP-CHANNEL
Power150mW
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Technical Specifications
Vishay SI1013R-T1-GE3 technical specifications.
General
Package/Case
SOT-416
Continuous Drain Current (ID)
350mA
Drain to Source Breakdown Voltage
-20V
Drain to Source Resistance
1.2R
Drain to Source Voltage (Vdss)
-20V
Drain-source On Resistance-Max
1.2R
Fall Time
9ns
Gate to Source Voltage (Vgs)
6V
Height
0.7mm
Lead Free
Lead Free
Length
1.58mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
150mW
Mount
Surface Mount
Number of Channels
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Polarization
P
Power Dissipation
150mW
Radiation Hardening
No
Rds On Max
1.2R
Reach SVHC Compliant
No
Series
TrenchFET®
Threshold Voltage
-450mV
Turn-Off Delay Time
35ns
Turn-On Delay Time
5ns
Width
0.76mm
Compliance
RoHS
Compliant
Datasheet
Vishay SI1013R-T1-GE3 Datasheet
Download the complete datasheet for Vishay SI1013R-T1-GE3 to view detailed technical specifications.
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