P-channel MOSFET transistor featuring a 20V drain-source breakdown voltage and 1.2Ω maximum drain-source on-resistance. Designed for surface mount applications, this component offers a continuous drain current of 350mA and a maximum power dissipation of 250mW. Operating across a wide temperature range from -55°C to 150°C, it exhibits fast switching characteristics with a 5ns turn-on delay and 11ns fall time.
MountingSurface Mount
PolarityP-CHANNEL
Power250mW
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Technical Specifications
Vishay SI1013X-T1-E3 technical specifications.
General
Continuous Drain Current (ID)
350mA
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
1.2R
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
1.2R
Fall Time
11ns
Gate to Source Voltage (Vgs)
6V
Height
0.031inch
Lead Free
Lead Free
Length
0.066inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
250mW
Mount
Surface Mount
Package Quantity
3000
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
250mW
Rds On Max
1.2R
RoHS Compliant
No
Series
TrenchFET®
Turn-Off Delay Time
35ns
Turn-On Delay Time
5ns
Width
0.037inch
Compliance
RoHS
Not Compliant
Datasheet
Vishay SI1013X-T1-E3 Datasheet
Download the complete datasheet for Vishay SI1013X-T1-E3 to view detailed technical specifications.
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